Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors

TitleThermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors
Publication TypeJournal Article
Year of Publication2001
AuthorsReid, A. R., T. C. Kleckner, M. K. Jackson, D. Marchesan, S. J. Kovacic, and J. R. Long
JournalElectron Devices, IEEE Transactions on
Volume48
Pagination1477 -1479
Date Publishedjul.
ISSN0018-9383
Keywords3D numerical model, deep trench wall, elemental semiconductors, emitter metallization, Ge-Si alloys, heat flow, heterojunction bipolar transistors, isolation technology, isothermal collector current measurement, semiconductor device measurement, semiconductor device models, semiconductor materials, shallow trenches, Si-SiGe, silicon, thermal resistance, trench-isolated devices
Abstract

We present a study of thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors (HBTs), using a technique based on isothermal collector current measurement. Measured thermal resistance is in good agreement with a realistic three-dimensional (3-D) numerical model; emitter metallization, shallow trenches, and heat flow through the deep trench walls are all shown to have a significant effect on the thermal resistance

URLhttp://dx.doi.org/10.1109/16.930671
DOI10.1109/16.930671

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