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| Title | Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors |
| Publication Type | Journal Article |
| Year of Publication | 2001 |
| Authors | Reid, A. R., T. C. Kleckner, M. K. Jackson, D. Marchesan, S. J. Kovacic, and J. R. Long |
| Journal | Electron Devices, IEEE Transactions on |
| Volume | 48 |
| Pagination | 1477 -1479 |
| Date Published | jul. |
| ISSN | 0018-9383 |
| Keywords | 3D numerical model, deep trench wall, elemental semiconductors, emitter metallization, Ge-Si alloys, heat flow, heterojunction bipolar transistors, isolation technology, isothermal collector current measurement, semiconductor device measurement, semiconductor device models, semiconductor materials, shallow trenches, Si-SiGe, silicon, thermal resistance, trench-isolated devices |
| Abstract | We present a study of thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors (HBTs), using a technique based on isothermal collector current measurement. Measured thermal resistance is in good agreement with a realistic three-dimensional (3-D) numerical model; emitter metallization, shallow trenches, and heat flow through the deep trench walls are all shown to have a significant effect on the thermal resistance |
| URL | http://dx.doi.org/10.1109/16.930671 |
| DOI | 10.1109/16.930671 |