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| Title | Weak scaling of thermal resistance in AlGaAs-GaAs heterojunction bipolar transistors |
| Publication Type | Conference Paper |
| Year of Publication | 2000 |
| Authors | Reid, A. R., T. C. Kleckner, M. K. Jackson, and P. J. Zampardi |
| Conference Name | Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000 |
| Pagination | 130 -133 |
| Keywords | 3D finite element modelling, AlGaAs-GaAs, AlGaAs-GaAs HBTs, AlGaAs-GaAs heterojunction bipolar transistors, aluminium compounds, emitter area, emitter geometry, emitter metallization, finite element analysis, finite heat-generating region thickness, gallium arsenide, heterojunction bipolar transistors, III-V semiconductors, peak temperature reduction, semiconductor device measurement, semiconductor device metallisation, semiconductor device models, thermal resistance, thermal resistance scaling |
| Abstract | Measured thermal resistance in AlGaAs-GaAs HBTs varies weakly with emitter area and geometry. 3D finite element modelling shows that the origin is the finite thickness of the heat-generating region, and that emitter metallization can substantially reduce peak temperature |
| URL | http://dx.doi.org/10.1109/BIPOL.2000.886189 |
| DOI | 10.1109/BIPOL.2000.886189 |