Title | Regional Signal-Delay Analysis Applied to High-Frequency Carbon Nanotube FETs |
Publication Type | Journal Article |
Year of Publication | 2007 |
Authors | Pulfrey, D. L., L. C. Castro, D. L. John, and M. Vaidyanathan |
Journal | Nanotechnology, IEEE Transactions on |
Volume | 6 |
Pagination | 711 -717 |
Date Published | nov. |
ISSN | 1536-125X |
Keywords | carbon nanotubes, channel region, delays, field effect transistors, field-effect transistor, high-frequency carbon nanotube, high-frequency carbon nanotube FETs, nanotube devices, signal-delay analysis, space-charge regions modulation, tunneling |
Abstract | A regional signal-delay analysis is presented for field-effect transistors intended for operation at very high frequencies. For the example used here of a doped-contact carbon nanotube field-effect transistor, the analysis reveals that tunneling into the channel region of the device, and modulation of the space-charge regions in the source and drain adjacent to the channel, are the principal contributors to the overall delay. A recently proposed lower limit to the signal delay time in the channel is critically examined via the introduction of a local signal velocity. |
URL | http://dx.doi.org/10.1109/TNANO.2007.907796 |
DOI | 10.1109/TNANO.2007.907796 |