Critique of high-frequency performance of carbon nanotube FETs

TitleCritique of high-frequency performance of carbon nanotube FETs
Publication TypeConference Paper
Year of Publication2007
AuthorsPulfrey, D. L.
Conference NameSolid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Pagination234 -238
Date Publishedsep.
Keywordscarbon nanotube FET, carbon nanotubes, field effect transistors, field-effect transistors, short-circuit current gain
Abstract

The emerging body of literature on the high-frequency performance of carbon nanotube field-effect transistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit fT, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.

URLhttp://dx.doi.org/10.1109/ESSDERC.2007.4430921
DOI10.1109/ESSDERC.2007.4430921

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