Carbon nanotube field-effect transistors: An assessment

TitleCarbon nanotube field-effect transistors: An assessment
Publication TypeConference Paper
Year of Publication2007
AuthorsPulfrey, D. L.
EditorBai, C., S. Xie, and X. Zhu
Conference NameNanoscience and Technology, Pts 1 and 2
Pagination503-506
PublisherNatl Ctr Nanosci & Technol; Natl Steering Comm Nanotechnol
Conference LocationLAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
ISBN Number978-3-908451-30-3
Keywordscarbon nanotube field-effect transistors, nanoelectronics
Abstract

A carbon nanotube (CN) is a cylindrical monolayer of graphene. The sigma-bonds of the hybridized carbon atoms hold the structure in place, and electrical conduction is provided via carriers in the non-localized pi-bonds. The label ``nano{''} is justified by the diameter of the CN, which, in devices typically employed in nanoelectronics, lies in the range 0.6 - 2 nm. The CN is worthy of study as a molecule from which nanoscale transistors might be fabricated because of several compelling properties, as discussed in this paper. The DC and AC capabilities of three types of carbon nanotube field-effect transistor (CNFET) are also briefly reviewed.

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