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| Title | High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes |
| Publication Type | Journal Article |
| Year of Publication | 2001 |
| Authors | Pulfrey, D. L., J. J. Kuek, M. P. Leslie, B. D. Nener, G. Parish, U. K. Mishra, P. Kozodoy, and E. J. Tarsa |
| Journal | Electron Devices, IEEE Transactions on |
| Volume | 48 |
| Pagination | 486 -489 |
| Date Published | mar. |
| ISSN | 0018-9383 |
| Keywords | aluminium compounds, delta-doped regions, doped GaN layers, doping profiles, gallium compounds, GaN-Al0.33Ga0.67N-GaN, heterostructure diodes, high UV/solar rejection ratios, III-V semiconductors, InGaN, InGaN quantum wells, low-bandgap GaN regions, MEDICI, p-i-n photodiodes, PIN photodiodes, semiconductor device models, simulations, solar-blind detection capability |
| Abstract | The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al0.33Ge0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude |
| URL | http://dx.doi.org/10.1109/16.906440 |
| DOI | 10.1109/16.906440 |