Application of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors

TitleApplication of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors
Publication TypeJournal Article
Year of Publication2000
AuthorsPulfrey, D. L., S. Fathpour, A. St. Denis, M. Vaidyanathan, W. A. Hagley, and R. K. Surridge
JournalJournal of Vacuum Science Technology A: Vacuum, Surfaces, and Films
Volume18
Pagination775 -779
Date Publishedmar.
ISSN0734-2101
Keywordsheterojunction bipolar transistors, hot carriers, numerical analysis, semiconductor device models
Abstract

The applicability of the traditional compact expressions for estimating the regional signal-delay times of heterojunction bipolar transistors is examined by means of a comparison with numerical device simulation. Regional partitioning in the numerical simulations is achieved by means of a simple phenomenological scheme. It is shown that the traditional expression for the emitter delay is inadequate due to a neglect of both the stored free charge within the emitter-base, space-charge region, and the stored charge in the quasi-neutral emitter. The importance of properly choosing the effective collection velocity when estimating the base delay is demonstrated by considering the effects of band-gap narrowing, quasi-ballistic transport, and hot-electron injection. It is pointed out that the effects of finite charge in the collector-base, space-charge region cannot be neglected when computing the collector delay. #xa9; 2000 American Vacuum Society.

URLhttp://dx.doi.org/10.1116/1.582178
DOI10.1116/1.582178

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