Towards an AlGaN, solar-blind, p-i-n photodetector

TitleTowards an AlGaN, solar-blind, p-i-n photodetector
Publication TypeJournal Article
Year of Publication1999
AuthorsPulfrey, D. L., J. J. Kuek, B. D. Nener, G. Parish, U. K. Mishra, and E. J. Tarsa
JournalPhysica Status Solid I A-Applied Research
Date PublishedNOV 16
Type of ArticleProceedings Paper

A heterostructure diode, utilizing p- and i-Al0.33Ga0.67N layers on top of an n-GaN region, is investigated for its-potential as a solar-blind photodetector. The study, which is carried out via simulations using MEDICI, examines some techniques for suppressing the hole current-that is photogenerated in the low bandgap n-GaN material. The factors considered are: the: thickness and electron affinity of the i-Al0.33Ga0.67N layer; the addition of a thin, n-doped AlGaN layer to widen the tunneling barrier for holes; and the creation of a thin region of low minority carrier lifetime at the heterointerface to remove the holes by recombination. The results show that AlGaN/GaN, p-i-n heterodiodes have considerable promise as solar-blind photodetectors.

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