Suggestions for the development of GaN-based photodiodes

TitleSuggestions for the development of GaN-based photodiodes
Publication TypeJournal Article
Year of Publication1998
AuthorsPulfrey, D. L., and B. D. Nener
JournalSolid -State Electronics
Volume42
Pagination1731-1736
Date PublishedSEP
Type of ArticleArticle
ISSN0038-1101
Abstract

A simple, analytical model is used to investigate the steady-state responsivity of GaN-based, p-i-n photodiodes. The trends exhibited by recent experimental data are reproduced and, in so doing, deficiencies in present GaN material, and inadequacies in electrical- and optical-parameter specification, are identified. The model is used to suggest that heterojunction diodes, fabricated from materials in the AlxGa1-xN ternary system, could produce practically important, specialized, UV photodetectors. (C) 1998 Elsevier Science Ltd. All rights reserved.

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