Compact modeling of high-frequency, small-dimension bipolar transistors

TitleCompact modeling of high-frequency, small-dimension bipolar transistors
Publication TypeConference Paper
Year of Publication1998
AuthorsPulfrey, D. L., A. R. St. Denis, and M. Vaidyanathan
Conference NameOptoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Pagination81 -85
Keywordsbipolar transistors, Boltzmann equation, Boltzmann transport equation, compact model, drift-diffusion equation, high-frequency bipolar transistor, high-speed device, maximum oscillation frequency, quasi-ballistic transport, semiconductor device models, small-dimension BJT
Abstract

Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters

URLhttp://dx.doi.org/10.1109/COMMAD.1998.791590
DOI10.1109/COMMAD.1998.791590

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