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| Title | Compact modeling of high-frequency, small-dimension bipolar transistors |
| Publication Type | Conference Paper |
| Year of Publication | 1998 |
| Authors | Pulfrey, D. L., A. R. St. Denis, and M. Vaidyanathan |
| Conference Name | Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on |
| Pagination | 81 -85 |
| Keywords | bipolar transistors, Boltzmann equation, Boltzmann transport equation, compact model, drift-diffusion equation, high-frequency bipolar transistor, high-speed device, maximum oscillation frequency, quasi-ballistic transport, semiconductor device models, small-dimension BJT |
| Abstract | Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters |
| URL | http://dx.doi.org/10.1109/COMMAD.1998.791590 |
| DOI | 10.1109/COMMAD.1998.791590 |