Tight-binding model for the x-ray absorption and emission spectra of dilute GaNxAs1-x at the nitrogen K edge

TitleTight-binding model for the x-ray absorption and emission spectra of dilute GaNxAs1-x at the nitrogen K edge
Publication TypeJournal Article
Year of Publication2004
AuthorsNodwell, E., M. Adamcyk, A. Ballestad, T. Tiedje, S. Tixier, S. E. Webster, E. C. Young, A. Moewes, E. Z. Kurmaev, and T. van Buuren
JournalPhysical Review B
Volume69
ISSN1098-0121
Abstract

X-ray absorption and fluorescence spectra have been measured at the nitrogen K edge of dilute GaNxAs1-x alloys. The x-ray spectra are in good agreement with an sp(3)s(*) tight-binding model in which nitrogen is included in a supercell configuration and the disorder in the nitrogen distribution is neglected. A strong peak in the x-ray absorption spectrum is interpreted as a nitrogen resonant state in the conduction band rather than as an electron-hole exciton. The tight-binding calculation is also in good agreement with the observed nitrogen concentration dependence of the optical band gap.

URLhttp://dx.doi.org/10.1103/PhysRevB.69.155210
DOI10.1103/PhysRevB.69.155210

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