TFT circuit integration in a-Si:H technology

TitleTFT circuit integration in a-Si:H technology
Publication TypeConference Paper
Year of Publication2002
AuthorsNathan, A., P. Servati, and K. S. Karim
Conference NameMicroelectronics, 2002. MIEL 2002. 23rd International Conference on
Pagination115 - 124 vol.1
Keywordsa-Si:H technology speed, active matrix organic light emitting diodes, AMOLED displays, amplifiers, compact TFT circuit models, crystalline Si, digital fluoroscopy, driver circuits, electric resistance, hydrogen, hydrogenated amorphous silicon, integrated circuit modelling, LED displays, material resistivity, material stability, medical applications, on-pixel amplifiers, on-pixel current drivers, polycrystalline Si, radiography, Si:H, silicon, stability, technology performance requirements, TFT circuit integration, thin film circuit design considerations, thin film transistors
Abstract

Although hydrogenated amorphous silicon (a-Si:H) is inherently disadvantaged in terms of speed and stability compared to polycrystalline or crystalline Si, there is an overwhelming need for this mature technology in several newly emerging and significant application areas. Here, the question arises as to whether circuit techniques can be employed to compensate for its intrinsic material shortcomings so as to meet performance requirements. The paper reviews precisely these challenges. Specifically, it addresses the development of compact thin film transistor (TFT) circuit models and examines design considerations pertinent to thin film circuits, such as on-pixel current drivers and amplifiers, whose integration requires nonconventional design solutions to deal with the high material resistivity and high instability. The family of circuits presented here are critical to two application areas: the active matrix organic light emitting diode (AMOLED) display and digital fluoroscopy for medical applications.

URLhttp://dx.doi.org/10.1109/MIEL.2002.1003157
DOI10.1109/MIEL.2002.1003157

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