Amorphous silicon back-plane electronics for OLED displays

TitleAmorphous silicon back-plane electronics for OLED displays
Publication TypeConference Paper
Year of Publication2002
AuthorsNathan, A., K. Sakariya, A. Kumar, P. Servati, and D. Striakhilev
Conference NameLasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Pagination303 - 304 vol.1
Keywordsa-Si:H TFT circuits, amorphous semiconductors, back-plane electronics, current-programmed pixel circuits, driver circuits, elemental semiconductors, high aperture ratio, high on-pixel integration, hydrogen, integrated optoelectronics, leakage currents, LED displays, low leakage current, low mobility, low parasitic capacitance, metastable threshold voltage shift, OLED displays, organic light emitting diode displays, organic light emitting diodes, pixel driver circuit, Si:H, silicon, stable predictable currents, thin film transistors, two TFT voltage-programmed circuit, vertically stacked pixel architectures

Summary form only given. In this paper, we present amorphous silicon (a-Si:H) thin film transistor circuits that compensate for material shortcomings such as metastable threshold voltage shift and low mobility, and supply stable and predictable currents to drive organic light emitting diode (OLED) displays. We also discuss vertically stacked pixel architectures that enable high aperture ratio and high on-pixel integration with low parasitic capacitance and leakage current.


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