a-Si:H back-plane electronics for medical imaging and OLED displays

Titlea-Si:H back-plane electronics for medical imaging and OLED displays
Publication TypeConference Paper
Year of Publication2002
AuthorsNathan, A., K. Sakariya, K. S. Karim, P. Servati, A. Kumar, and D. Striakhilev
Conference NameSemiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Pagination15 - 21
Date Publisheddec.
Keywordsactive matrix flat panel imagers, active matrix organic light emitting diode displays, amorphous semiconductors, amorphous Si:H back plane electronics, amorphous Si:H based gate demultiplexer architecture, amorphous silicon circuits, aperture ratio, biomedical imaging, demultiplexing equipment, elemental semiconductors, fill factor pixels, flat panel displays, hydrogen, LED displays, medical imaging, OLED displays, on-panel gate driver integration, organic light emitting diodes, pixel architectures, Si:H, silicon, thin film transistor circuit topologies, thin film transistors, threshold voltage shift invariant

This paper reviews design considerations along with measurement results pertinent to amorphous silicon (a-Si:H) circuits for active matrix flat panel imagers (AMFPI) and active matrix organic light emitting diode (AMOLED) displays. We describe both pixel architectures and thin film transistor (TFT) circuit topologies that are amenable for vertically integrated, high aperture ratio or high fill factor pixels. Here, the OLED or detector layers are integrated directly above the TFT circuit layer, to provide an active pixel area that is at least 80% of the total pixel area with an aperture ratio or fill factor that remains virtually independent of scaling. Integration of on-panel gate drivers is also presented where we discuss an a-Si:H based gate de-multiplexer architecture that is threshold voltage shift invariant.


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