Thin film imaging technology on glass and plastic

TitleThin film imaging technology on glass and plastic
Publication TypeConference Paper
Year of Publication2000
AuthorsNathan, A., B. Park, A. Sazonov, S. Tao, Z. H. Gu, I. Chan, P. Servati, K. Karim, T. Charania, D. Striakhilev, Q. Ma, and R. V. R. Murthy
Conference NameMicroelectronics, 2000. ICM 2000. Proceedings of the 12th International Conference on
Pagination11 -14
Keywords120 C, a-Si:H technology, amorphous semiconductors, detector operating principles, doping profiles, elemental semiconductors, fabrication process issues, fabrication processes, flexible polymer substrates, glass substrates, high energy radiation, hydrogen, hydrogenated amorphous silicon technology, image sensors, Imaging, low temperature processing, optical signals, optoelectronic characteristics, pixel integration, plastic substrates, Schottky diode detector, Schottky diodes, semiconductor thin films, Si:H, silicon, thin film imaging technology, thin film transistor, thin film transistors, X-ray detection, X-ray imaging, X-ray imaging technology
Abstract

Hydrogenated amorphous silicon (a-Si:H) technology offers a viable technological alternative for improved imaging of optical signals and high energy radiation. This paper reviews X-ray imaging technology in terms of detector operating principles, including optoelectronic characteristics, and fabrication process issues related to pixel (Schottky diode detector plus thin film transistor) integration. Recent results which describe the extension of the current fabrication processes to low ( 120 deg;C) temperature are also presented. The low temperature processing enables fabrication of thin electronics on flexible (polymer) substrates

URLhttp://dx.doi.org/10.1109/ICM.2000.916404
DOI10.1109/ICM.2000.916404

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