Amorphous silicon image sensor technology

TitleAmorphous silicon image sensor technology
Publication TypeConference Paper
Year of Publication2000
AuthorsNathan, A., A. Sazonov, R. V. R. Murthy, Z. H. Gu, Q. Ma, B. Park, S. Tao, I. Chan, P. Servati, and K. S. Karim
EditorKumar, V., and S. K. Agarwal
Conference NamePROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II
Pagination691-698
PublisherDefence Res & Dev Org; Minist Informat Technol; Council Sci & Indust Res; Dept Space; Int Soc Opt Engn; Abdus Salam Int Ctr Theoret Phys; IEEE Electron Device Soc; Semiconduct Complex Ltd; Philips, India Ltd; Karl Suss GmbH; Leica Microsyst Lithogr Ltd; E
Conference Location1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
ISBN Number0-8194-3601-1
Abstract

This paper reviews amorphous silicon (a-Si:H) technology and its applications to sensing and imaging of optical and X-ray signals. We describe the underlying operating principles including optoelectronic characteristics as well as fabrication process Issues related to integration of the sensor and thin film transistor. The latter is used as a switching element in the matrix addressed array. Issues pertinent to thin film transistor leakage will also be discussed along with process optimization results for its reduction. Some recent results will be presented, which describe the extension of the current fabrication processes to temperatures below 100 degrees C, enabling fabrication of mechanically flexible thin film electronics and image sensor arrays on polymer substrates.

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