Reduction of dark current under reverse bias in a-Si : H p-i-n photodetectors

TitleReduction of dark current under reverse bias in a-Si : H p-i-n photodetectors
Publication TypeConference Paper
Year of Publication2002
AuthorsMorrison, S., P. Servati, Y. Vygranenko, A. Nathan, and A. MADAN
EditorCohen, J. D., J. R. Abelson, H. Matsumura, and J. Robertson
PublisherMat Res Soc
Conference Location506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
ISBN Number1-55899-651-6

This paper presents the development of low dark current amorphous silicon (a-Si:H) based heterojunction photodiodes. A series of p-i-n and n-i-p structures have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Junction properties and carrier transport are investigated in terms of dark and light current-voltage characteristics, time dependence of the dark current, and spectral photoresponse measurements. It is demonstrated that a thin (similar to4 nm) undoped a-SiC:H buffer layer introduced between the p and i layers reduces the leakage current and improves the diode ideality factor. A dark current density of similar to10 pA/cm(2) at reverse bias of I V was achieved for the n-i-p structure. Optimization of device design for further improvement of dark current and photoresponse is discussed.

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