Error analysis of boundary condition approximations in the modeling of coaxially-gated carbon nanotube field-effect transistors

TitleError analysis of boundary condition approximations in the modeling of coaxially-gated carbon nanotube field-effect transistors
Publication TypeJournal Article
Year of Publication2006
AuthorsMcGuire, D. L., and D. L. Pulfrey
JournalPhysica Status Solid I A-Applications and Materials Science
Volume203
Pagination1111-1116
Date PublishedMAY
Type of ArticleProceedings Paper
ISSN0031-8965
Abstract

In the modeling of carbon nanotube field-effect transistors, non-physical boundary conditions are often employed at the borders of the simulation space. This paper investigates the consequences of imposing these boundary conditions on common geometries, and proposes solutions which reduce the error without compromising simulation efficiency. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

URLhttp://dx.doi.org/10.1002/pssa.200566122%7D
DOI10.1002/pssa.200566122

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