A multi-scale model for mobile and localized electroluminescence in carbon nanotube field-effect transistors

TitleA multi-scale model for mobile and localized electroluminescence in carbon nanotube field-effect transistors
Publication TypeJournal Article
Year of Publication2006
AuthorsMcGuire, D. L., and D. L. Pulfrey
JournalNano Technology
Volume17
Pagination5805-5811
Date PublishedDEC 14
Type of ArticleArticle
ISSN0957-4484
Abstract

A multi-scale model is presented that captures the experimentally observed behaviour of electroluminescence (EL) in carbon nanotube field-effect transistors (CNFETs) under ambipolar bias conditions, namely variations in mobile EL intensity, localized EL at a contact, and localized EL at a charge defect. A full, quantum mechanical approach is used to describe tunnelling and thermionic emission at the contacts, and the drift-diffusion equations, with a field-dependent mobility, are used for transport in the long devices (CN length >= 10 mu m). We find that contact-localized EL is only present when the height of the Schottky barrier at the ends of the CN favours the injection of one type of carrier. Charge defects on the CN surface also lead to localized EL, which is present only under certain bias conditions.

URLhttp://dx.doi.org/10.1088/0957-4484/17/23/016%7D
DOI10.1088/0957-4484/17/23/016

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