Noise in integrated optical receiver front-ends employing InP/InGaAs HBTs

TitleNoise in integrated optical receiver front-ends employing InP/InGaAs HBTs
Publication TypeConference Paper
Year of Publication1993
AuthorsLiu, Q. Z., and D. L. Pulfrey
Conference NameIndium Phosphide and Related Materials, 1993. Conference Proceedings., 5th International Conference on
Pagination417 -419
Date Publishedapr.
Keywords1 GB/s, 10 GB/s, bipolar integrated circuits, gallium arsenide, heterojunction bipolar transistors, heterostructure bipolar transistors, III-V semiconductors, indium compounds, InP-InGaAs, InP/InGaAs HBTs, input noise current spectral density, integrated circuit noise, integrated optical receiver front-ends, integrated optoelectronics, optical receivers, receiver sensitivity, semiconductor, small-signal parameters
Abstract

The authors present calculations of the equivalent input noise current spectral density in both tuned and untuned front-ends employing InP/InGaAs heterostructure bipolar transistors (HBTs) and identify the dominant transistor-related components of the noise. The receiver sensitivity will depend ultimately on the front-end noise. Results are presented for receivers based on InP/InGaAs HBTs as used in either 1 GB/s or 10 GB/s demonstration units. The small-signal parameters for these transistors are shown

URLhttp://dx.doi.org/10.1109/ICIPRM.1993.380595
DOI10.1109/ICIPRM.1993.380595

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