Analysis of the transistor-related noise in integrated p-i-n-HBT optical receiver front-ends

TitleAnalysis of the transistor-related noise in integrated p-i-n-HBT optical receiver front-ends
Publication TypeJournal Article
Year of Publication1993
AuthorsLiu, Q. Z., D. L. Pulfrey, and M. K. Jackson
JournalElectron Devices, IEEE Transactions on
Pagination2204 -2210
Date Publisheddec.
Keywords1 to 10 Gbit/s, 10 MHz to 1 GHz, base current shot noise, base resistance thermal noise, bipolar integrated circuits, collector current shot noise, equivalent-input-noise-current spectral density, gallium arsenide, heterojunction bipolar transistors, III-V semiconductors, indium compounds, InP-InGaAs, InP/InGaAs heterojunction bipolar transistors, integrated optoelectronics, integrated p-i-n-HBT optical receiver front-ends, monolithically integrated optical receiver, noise performance, noise sources, optical receivers, p-i-n photodiode, p-i-n photodiodes, semiconductor device models, semiconductor device noise, small-signal model, transistor-related noise

The equivalent-input-noise-current spectral density for a monolithically integrated optical receiver front-end using InP/InGaAs heterojunction bipolar transistors and a p-i-n photodiode is computed from a small-signal model. Particular attention is paid to the contributions to the noise from the HBT in the first stage of the amplifier. It is shown that with transistors designed for 1-10-Gb/s receivers the base current shot noise dominates in the frequency range from 10 MHz to 1 GHz, and both the base resistance thermal noise and the collector current shot noise are important at higher frequencies. Device features which determine the extent of these noise sources are identified, and ways to improve the noise performance are discussed


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