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| Title | How to Achieve High Mobility Thin Film Transistors by Direct Deposition of Silicon Using 13.56 MHz RF PECVD? |
| Publication Type | Conference Paper |
| Year of Publication | 2006 |
| Authors | Lee, C. - H., A. Sazonov, J. Robertson, A. Nathan, M. R. Esmaeili-Rad, P. Servati, and W. I. Milne |
| Conference Name | Electron Devices Meeting, 2006. IEDM '06. International |
| Pagination | 1 -4 |
| Date Published | dec. |
| Keywords | 13.56 MHz, 150 C, accidental donor, CMOS nanocrystalline silicon thin film transistors, defect density, direct deposition, elemental semiconductors, field effect mobility, high mobility thin film transistors, hydrogen passivation, impurity concentration, nanocrystalline Si layer, oxygen content, passivation, plasma CVD, radio-frequency plasma enhanced chemical vapor deposition, RF PECVD, secondary ion mass spectrometry measurements, secondary ion mass spectroscopy, Si, silicon, thin film transistors |
| Abstract | CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150 degC. The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation |
| URL | http://dx.doi.org/10.1109/IEDM.2006.346766 |
| DOI | 10.1109/IEDM.2006.346766 |