Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

TitleRelationship between surface morphology and strain relaxation during growth of InGaAs strained layers
Publication TypeJournal Article
Year of Publication1995
AuthorsLavoie, C., T. Pinnington, E. Nodwell, T. Tiedje, R. S. Goldman, K. L. Kavanagh, and J. L. Hutter
JournalApplied Physics Letters
Volume67
Pagination3744–3746
ISSN0003-6951
Abstract

The relationship between the surface morphology and strain relaxation is explored in strained InxGa1-xAs layers grown on GaAs by molecular beam epitaxy. In situ light scattering, detected simultaneously along [110] and [1(1) over bar0$], reveals an asymmetric surface roughening which is consistent with ex situ scanning force microscopy. Transmission electron microscopy shows that strain relaxation by misfit dislocation formation occurs before the surface roughening is detected, for In0.18Ga0.82As films grown at 490 degrees C. (C) 1995 American Institute of Physics.

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