Effects of band tail absorption on AlGaN-based ultraviolet photodiodes

TitleEffects of band tail absorption on AlGaN-based ultraviolet photodiodes
Publication TypeJournal Article
Year of Publication2001
AuthorsKuek, J. J., D. L. Pulfrey, B. D. Nener, J. M. Dell, G. Parish, and U. K. Mishra
JournalPhysica Status Solid I A-Applied Research
Volume188
Pagination311-315
Date PublishedNOV
Type of ArticleProceedings Paper
ISSN0031-8965
Abstract

An MOCVD grown p-GaN/i-Al0.33Ga0.67N/n-Al0.33Ga0.67N photodiode on a SiC substrate is investigated. Simulation seems to indicate that the higher than expected responsivities of these photodiodes at wavelengths longer than 300 nm is due to band tail absorption within the Al0.33Ga0.67N layers.

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