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| Title | Effects of polarisation on solar-blind AlGaN UV photodiodes |
| Publication Type | Conference Paper |
| Year of Publication | 2000 |
| Authors | Kuek, J. J., D. L. Pulfrey, B. D. Nener, J. M. Dell, G. Parish, and U. K. Mishra |
| Conference Name | Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on |
| Pagination | 459 - 462 |
| Keywords | aluminium compounds, finite element analysis, finite element model, gallium compounds, GaN-Al0.33Ga0.67N-GaN, III-V semiconductors, incomplete dopant ionisation, interface charge, p-GaN/i-Al0.33Ga0.67N/n-GaN photodiode, p-i-n photodiodes, semiconductor device models, solar blindness, spectral responsivity, spontaneous polarisation, strain induced polarisation, ultraviolet detectors, UV photodetector, wide band gap semiconductors |
| Abstract | The effects of spontaneous and strain induced polarisation, and incomplete dopant ionisation on the spectral responsivity of a Ga-faced p-GaN/i-Al0.33Ga0.67N/n-GaN photodiode structure are determined using a commercial finite element modelling package. It is shown that polarisation induced interface charges increase the barrier to carriers generated in the GaN regions of the diode, improving the solar-blindness of the diode by more than three orders of magnitude. In contrast, incomplete dopant ionisation has only a minor effect. |
| URL | http://dx.doi.org/10.1109/COMMAD.2000.1022989 |
| DOI | 10.1109/COMMAD.2000.1022989 |