Title | A 4-GHz large-area (160000 mu;m2) MSM-PD on ITG-GaAs |
Publication Type | Journal Article |
Year of Publication | 2000 |
Authors | Krishnamurthy, V., M. C. Hargis, and M. R. Melloch |
Journal | Photonics Technology Letters, IEEE |
Volume | 12 |
Pagination | 71 -73 |
Date Published | jan. |
ISSN | 1041-1135 |
Keywords | 10 V, 4 GHz, carrier lifetime, GaAs, gallium arsenide, III-V semiconductors, impulse response, intermediate temperature growth, ITG-GaAs, large-area MSM-PD, metal-semiconductor-metal photodetector, metal-semiconductor-metal structures, photodetectors |
Abstract | We report the first large-area (400 mu;m times;400 mu;m) metal-semiconductor-metal photodetector (MSM-PD) with a FWHM of 86 ps (4-GHz bandwidth), and nanoamp dark currents at 10 V. This is achieved by using intermediate-temperature grown GaAs (ITG-GaAs) to tailor the carrier lifetime in the material, so that the lifetime ap;transit time between the electrodes. This removes the slow tail response typical of the impulse response of MSM-PDs, without significantly reducing the responsivity. A comparison to normal-temperature GaAs is made demonstrating a dramatic improvement for large-area photodetectors. Thus, we have shown that ITG-GaAs is an excellent material for large-area detectors |
URL | http://dx.doi.org/10.1109/68.817497 |
DOI | 10.1109/68.817497 |