Effect of emitter metallization on thermal properties of small AlGaAs heterojunction bipolar transistors

TitleEffect of emitter metallization on thermal properties of small AlGaAs heterojunction bipolar transistors
Publication TypeJournal Article
Year of Publication2001
AuthorsKleckner, T. C., A. R. Reid, A. R. St Denis, and M. K. Jackson
JournalJournal of Applied Physics
Volume89
Pagination4195–4197
ISSN0021-8979
Abstract

We have extended an experimental technique to measure thermal resistance by pulsed current-voltage measurements to small bipolar transistors with thermal time constants of several hundred nanoseconds. Results for a 3x3 mum(2) AlGaAs/GaAs heterojunction bipolar transistor are compared with detailed finite element method simulations, and show good agreement when heat flow into the emitter metallization is accounted for. Simulation results indicate that emitter metallization plays a significant role in reducing temperature nonuniformity across the emitter. (C) 2001 American Institute of Physics.

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