Hall effect study of YBCO HTS films implanted with phosphorous ions

TitleHall effect study of YBCO HTS films implanted with phosphorous ions
Publication TypeJournal Article
Year of Publication1997
AuthorsKato, H., A. Kulpa, A. Wong, D. Hui, N. A. F. Jaeger, J. F. Carolan, W. N. Hardy, and Q. Y. Ma
JournalApplied Superconductivity, IEEE Transactions on
Pagination1616 -1619
Date Publishedjun.
Keywords100 keV, 100 to 140 nm, barium compounds, carrier concentration, carrier density, electronic device fabrication, Hall effect, high-temperature superconductors, HTS films, ion implantation, patterning, phosphorus, superconducting thin films, YBa2Cu3O7:P, yttrium compounds

The inhibition of superconductivity in YBCO HTS films using ion implantation has shown itself to be a promising method for patterning HTS films for use in the fabrication of electronic devices. In this work we have shown that the carrier concentrations in YBCO films may be reduced in a controlled fashion using ion implantation, while retaining the superconducting properties of the films. YBCO films 100 to 140 nm thick commercially grown on SrTiO3, were implanted with phosphorus ions, at 100 keV, with doses ranging from 1 times;1014 /cm2 to 1 times;1015/cm2. Superconducting specimens with carrier concentrations ranging from  10x1021/cm3, for an unimplanted sample, to  7 times;1020/cm3 for a sample receiving an implant dose of 1 times;1015/cm2, were obtained. The carrier concentrations were determined from Hall effect measurements


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