Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors

TitleSwitching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors
Publication TypeJournal Article
Year of Publication2006
AuthorsJohn, D. L., and D. L. Pulfrey
JournalJournal of Vacuum Science Technology A: Vacuum, Surfaces, and Films
Volume24
Pagination708 -712
Date Publishedmay.
ISSN0734-2101
Keywordscapacitance, carbon nanotubes, field effect transistor switches, leakage currents, Schottky barriers
Abstract

The switching times and on/off-current ratios are computed for Schottky-barrier carbon nanotube field-effect transistors with different tube diameters and insulator thicknesses. It is indicated that it may be difficult to obtain a device exhibiting both high speed and low leakage current. A small-diameter nanotube with a thin insulator may offer the best compromise. It is also demonstrated that interelectrode capacitances can be large, thereby calling into question the usefulness of the intrinsic switching time as a figure of merit for transistors intended for digital-logic applications. The extrinsic switching time is a more appropriate metric and it is shown here that considerable optimization of the carbon nanotube field-effect transistor will be required to achieve figures better than for modern Si complementary metal-oxide-semiconductor transistors over a reasonable range of on/off-current ratio.

URLhttp://dx.doi.org/10.1116/1.2194932
DOI10.1116/1.2194932

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