Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors

TitleElectrostatics of coaxial Schottky-barrier nanotube field-effect transistors
Publication TypeJournal Article
Year of Publication2003
AuthorsJohn, D. L., L. C. Castro, J. Clifford, and D. L. Pulfrey
JournalNanotechnology, IEEE Transactions on
Volume2
Pagination175 - 180
Date Publishedsep.
ISSN1536-125X
Keywordsabove-threshold drain current-voltage characteristics, analytical methods, carbon nanotube field-effect transistors, carbon nanotubes, coaxial Schottky-barrier nanotube field-effect transistors, cylindrical surrounding gate, dielectric thin films, drain current, electron contributions, electrostatic analysis, gate dielectric permittivity, gate dielectric thickness, hole contributions, Laplace equation, nanotechnology, nanotube devices, nanotube potential profile, numerical methods, Poisson equation, Schottky barriers, Schottky gate field effect transistors, Schottky-barrier contacts, semiconductor device models, subthreshold characteristics, subthreshold slope, work function, work functions
Abstract

Analytical and numerical methods are used to solve Poisson's equation for carbon nanotube field-effect transistors (FETs) with a cylindrical surrounding gate and Schottky-barrier contacts to the source and drain. The effect on the nanotube potential profile of varying the work functions of all the electrodes, and the thickness and permittivity of the gate dielectric, is investigated. From these results, the general trends to be expected in the above-threshold drain current-voltage characteristics of Schottky-barrier nanotube FETs are predicted. The unusual possibility of simultaneous electron and hole contributions to the drain current is revealed. The subthreshold characteristics are computed from a solution to Laplace's equation, and the subthreshold slope is found to depend on gate dielectric thickness in a different manner from that in other FETs.

URLhttp://dx.doi.org/10.1109/TNANO.2003.817228
DOI10.1109/TNANO.2003.817228

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