Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress

TitleThreshold voltage instability of amorphous silicon thin-film transistors under constant current stress
Publication TypeJournal Article
Year of Publication2005
AuthorsJahinuzzaman, S. M., A. Sultana, K. Sakariya, P. Servati, and A. Nathan
JournalApplied Physics Letters
Volume87
Date PublishedJUL 11
Type of ArticleArticle
ISSN0003-6951
Abstract

We investigate the time-dependent shift in the threshold voltage of amorphous silicon thin-film transistor stressed with constant drain current. We observe a nonsaturating power-law time dependence, which is in contrast to the conventional stretched exponential that saturates at prolonged stress time. The result is consistent with the carrier-induced defect creation model and corroborates the nonlinear dependence of the rate of defect creation on the band-tail carrier density. (c) 2005 American Institute of Physics.

URLhttp://dx.doi.org/10.1063/1.1993766%7D
DOI10.1063/1.1993766

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