Slow-wave electrode for use in compound semiconductor electrooptic modulators

TitleSlow-wave electrode for use in compound semiconductor electrooptic modulators
Publication TypeJournal Article
Year of Publication1992
AuthorsJaeger, N. A. F., and Z. K. F. Lee
JournalQuantum Electronics, IEEE Journal of
Volume28
Pagination1778 -1784
Date Publishedaug.
ISSN0018-9197
Keywords50 ohm, 75 ohm, capacitively loaded coplanar strip waveguide, characteristic impedances, compound semiconductor electrooptic modulators, effective refractive index, electro-optical devices, electrodes, etching, GaAs substrates, integrated optic traveling-wave modulators, integrated optics, lithographic techniques, metallization, micron scale resolution, microwave effective refractive index, optical modulation, optical workshop techniques, photolithography, refractive index, resists, semiconductor growth, single layer, single photo-resist patterning, slow-wave electrode structure, standard lift-off technique
Abstract

A slow-wave electrode structure for integrated optic traveling-wave modulators in which the microwave's effective refractive index is matched to the optical wave's effective refractive index is described. The electrode structure is a capacitively loaded coplanar strip waveguide which can be formed in a single layer of metallization. Fabrication can be accomplished by a single photo-resist patterning, followed by an etching and a standard lift-off technique. Based on the use of gallium arsenide substrates and modern lithographic techniques allowing fabrication with micron scale resolution, slow-wave electrodes having a microwave effective refractive index of 3.5, as well as 50 and 75 Omega; characteristic impedances are proposed. The theory of slow-wave electrodes is developed, and slow-wave electrodes have been designed, fabricated, and tested to verify the theory. Measurement results are found to agree well with the theory

URLhttp://dx.doi.org/10.1109/3.142575
DOI10.1109/3.142575

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