Slow-wave electrode for use in compound semiconductor electrooptic modulators

TitleSlow-wave electrode for use in compound semiconductor electrooptic modulators
Publication TypeJournal Article
Year of Publication1992
AuthorsJaeger, N. A. F., and Z. K. F. Lee
JournalQuantum Electronics, IEEE Journal of
Pagination1778 -1784
Date Publishedaug.
Keywords50 ohm, 75 ohm, capacitively loaded coplanar strip waveguide, characteristic impedances, compound semiconductor electrooptic modulators, effective refractive index, electro-optical devices, electrodes, etching, GaAs substrates, integrated optic traveling-wave modulators, integrated optics, lithographic techniques, metallization, micron scale resolution, microwave effective refractive index, optical modulation, optical workshop techniques, photolithography, refractive index, resists, semiconductor growth, single layer, single photo-resist patterning, slow-wave electrode structure, standard lift-off technique

A slow-wave electrode structure for integrated optic traveling-wave modulators in which the microwave's effective refractive index is matched to the optical wave's effective refractive index is described. The electrode structure is a capacitively loaded coplanar strip waveguide which can be formed in a single layer of metallization. Fabrication can be accomplished by a single photo-resist patterning, followed by an etching and a standard lift-off technique. Based on the use of gallium arsenide substrates and modern lithographic techniques allowing fabrication with micron scale resolution, slow-wave electrodes having a microwave effective refractive index of 3.5, as well as 50 and 75 Omega; characteristic impedances are proposed. The theory of slow-wave electrodes is developed, and slow-wave electrodes have been designed, fabricated, and tested to verify the theory. Measurement results are found to agree well with the theory


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