Temperature impact on the lorentzian noise induced by electron valance band tunneling in partiallydepleted SOI nMOSFETs

TitleTemperature impact on the lorentzian noise induced by electron valance band tunneling in partiallydepleted SOI nMOSFETs
Publication TypeConference Paper
Year of Publication2006
AuthorsGuo, W., B. Cretu, J. M. Routoure, R. Carin, E. Simoen, and C. Claeys
Conference NameSolid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Pagination58 -60
Date Publishedoct.
Keywords300 K, 80 K, electron valence band tunneling, gate voltage noise spectral density, Lorentzian noise parameters, Lorentzian time constant, MOSFET, nMOSFET, partially depleted SOI, plateau amplitude, semiconductor device models, silicon-on-insulator, temperature impact, tunneling current, tunnelling, valence bands
Abstract

In this paper, the temperature impact on the Lorentzian noise induced by electron valence band tunneling (EVB) is analyzed for partially depleted SOI MOSFETs. In (Lukyanchikova et al., 2003) and (Lukyanchikova et al., 2004) the Lorentzian noise parameters were already studied at 300K and a model based on shot noise of the EVB tunneling current was proposed. The aim of this paper is to investigate the Lorentzian time constant tau and the plateau amplitude of the gate voltage noise spectral density SVG (0) variation versus temperature, where SVG (0) = SI (0)/(gm)2 . It is observed that from 300K down to 80K tau and SVG (0) exhibit behaviors in agreement with the existing model (Lukyanchikova et al., 2003) and (Lukyanchikova et al., 2004)

URLhttp://dx.doi.org/10.1109/ICSICT.2006.306076
DOI10.1109/ICSICT.2006.306076

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