Electrical and Computer Engineering
2332 Main Mall
Vancouver,
BC
Canada
V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:
info@ece.ubc.ca
| Title | A physics-based HBT SPICE model for large-signal applications |
| Publication Type | Journal Article |
| Year of Publication | 1995 |
| Authors | Feng, J. J. X., D. L. Pulfrey, J. Sitch, and R. Surridge |
| Journal | Electron Devices, IEEE Transactions on |
| Volume | 42 |
| Pagination | 8 -14 |
| Date Published | jan. |
| ISSN | 0018-9383 |
| Keywords | barrier height, electron back injection, emitter-base diode ideality factor, equivalent circuits, graded-base HBT, heterojunction bipolar transistors, homojunction BJT macromodule, large-signal applications, physics-based HBT SPICE model, semiconductor device models, SPICE, stimulator, tunneling factor, tunnelling, voltage dependencies |
| Abstract | A new, physics-based, large-signal SPICE model for graded-base HBT's is reported. The novelty of the model lies in its use of the emitter-base diode ideality factor to account for the voltage dependencies of the tunneling factor and the barrier height for back injection of electrons. This expedient allows the HBT to be simply represented in SPICE by the regular homojunction BJT macromodule of this stimulator. The usefulness and accuracy of the model are demonstrated by comparisons of simulated and measured data for a graded-base AlGaAs-GaAs HBT: DC I-V data and large-signal switching results from a ring-oscillator circuit are presented |
| URL | http://dx.doi.org/10.1109/16.370042 |
| DOI | 10.1109/16.370042 |