Small-signal modeling of the transistor laser including the quantum capture and escape lifetimes

TitleSmall-signal modeling of the transistor laser including the quantum capture and escape lifetimes
Publication TypeJournal Article
Year of Publication2008
AuthorsFaraji, B., D. L. Pulfrey, and L. Chrostowski
JournalApplied Physics Letters
Volume93
Pagination103509 -103509-3
Date Publishedsep.
ISSN0003-6951
Keywordscarrier lifetime, minority carriers, quantum well lasers, transistors
Abstract

The authors report the analytical small-signal modeling of the distribution of minority carriers in the base of a transistor laser and of the high-speed dynamics of the device. The modeling is based on analytically solving the continuity equation and the rate equations, which incorporate the virtual states as a conversion mechanism. Wide-band operation of the transistor laser along with the suppression of the relaxation oscillation frequency peak is demonstrated.

URLhttp://dx.doi.org/10.1063/1.2981799
DOI10.1063/1.2981799

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