Investigations of avalanche dynamics in IGBTs, bipolar GTOs and MCTs

TitleInvestigations of avalanche dynamics in IGBTs, bipolar GTOs and MCTs
Publication TypeConference Paper
Year of Publication1995
AuthorsDuta, M. J., and E. Cretu
Conference NameTelecommunications Energy Conference, 1995. INTELEC '95., 17th International
Pagination340 -345
Date Publishedoct.
Keywordsanalytical models, avalanche breakdown, bipolar gate turn off (GTO) thyristors, bipolar GTO, bipolar phase, bipolar transistor switches, dynamic avalanche, dynamic forward blocking voltage, failure mechanism, IGBT, insulated gate bipolar transistors, MCT, MOS controlled thyristors, MOS-controlled thyristors, p-n heterojunctions, power bipolar transistors, power semiconductor switches, semiconductor device models, sustaining voltage, thyristors, transient turn off, turn off, unipolar phase
Abstract

A comprehensive investigation of the dynamic avalanche breakdown in insulated gate bipolar transistors (IGBT), bipolar gate turn off (GTO) thyristors and MOS controlled thyristors (MCT) is performed in this work. Based on analytical models of the failure mechanism due to dynamic avalanche, straightforward expressions of the effective dynamic forward blocking voltage fairly correctly predicting the decrease of sustaining voltage are deduced in this work. For the IGBT, two types of dynamic avalanche breakdown are identified: one during the unipolar phase of turn off; the second during the bipolar phase of the transient turn off. It is shown that for a gain of the active inner bipolar transistor less than 0.5, dynamic avalanche breakdown occurs only in the bipolar phase of turn off. The reduction of the gain below 0.4 greatly diminishes the chances for the dynamic breakdown of IGBTs. The phenomena leading to the dynamic avalanche breakdown of bipolar GTOs and MCTs with PMOS type turn off gate are rather similar. The design and drive conditions that might eliminate the dynamic avalanche breakdown are also presented in this work

URLhttp://dx.doi.org/10.1109/INTLEC.1995.498973
DOI10.1109/INTLEC.1995.498973

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