Title | Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs |
Publication Type | Journal Article |
Year of Publication | 2003 |
Authors | Clifford, J., D. L. John, and D. L. Pulfrey |
Journal | Nanotechnology, IEEE Transactions on |
Volume | 2 |
Pagination | 181 - 185 |
Date Published | sep. |
ISSN | 1536-125X |
Keywords | bipolar conduction, breakdown-like feature, carbon nanotube FETs, carbon nanotubes, drain current-voltage characteristics, drain I-V characteristic, drain-induced barrier thinning, electron charges, electron currents, electron quasi-Fermi levels, energy band diagram, Fermi level, hole charges, hole currents, hole quasi-Fermi levels, nanotube devices, out-of-equilibrium results, quasi-equilibrium analysis, saturating-type characteristic, Schottky gate field effect transistors, Schottky-barrier carbon nanotube field-effect transistors, self-consistent solution, semiconductor device models, two-dimensional potential profile, work function, workfunction engineering |
Abstract | The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube field-effect transistors (FETs) are computed via a self-consistent solution to the two-dimensional potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain contacts to the tube, respectively. The interesting phenomena of bipolar conduction in a FET, and of drain-induced barrier thinning (DIBT) are observed. These phenomena are shown to add a breakdown-like feature to the drain I-V characteristic. It is also shown that a more traditional, saturating-type characteristic can be obtained by workfunction engineering of the source and drain contacts. |
URL | http://dx.doi.org/10.1109/TNANO.2003.817527 |
DOI | 10.1109/TNANO.2003.817527 |