Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs

TitleBipolar conduction and drain-induced barrier thinning in carbon nanotube FETs
Publication TypeJournal Article
Year of Publication2003
AuthorsClifford, J., D. L. John, and D. L. Pulfrey
JournalNanotechnology, IEEE Transactions on
Volume2
Pagination181 - 185
Date Publishedsep.
ISSN1536-125X
Keywordsbipolar conduction, breakdown-like feature, carbon nanotube FETs, carbon nanotubes, drain current-voltage characteristics, drain I-V characteristic, drain-induced barrier thinning, electron charges, electron currents, electron quasi-Fermi levels, energy band diagram, Fermi level, hole charges, hole currents, hole quasi-Fermi levels, nanotube devices, out-of-equilibrium results, quasi-equilibrium analysis, saturating-type characteristic, Schottky gate field effect transistors, Schottky-barrier carbon nanotube field-effect transistors, self-consistent solution, semiconductor device models, two-dimensional potential profile, work function, workfunction engineering
Abstract

The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube field-effect transistors (FETs) are computed via a self-consistent solution to the two-dimensional potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain contacts to the tube, respectively. The interesting phenomena of bipolar conduction in a FET, and of drain-induced barrier thinning (DIBT) are observed. These phenomena are shown to add a breakdown-like feature to the drain I-V characteristic. It is also shown that a more traditional, saturating-type characteristic can be obtained by workfunction engineering of the source and drain contacts.

URLhttp://dx.doi.org/10.1109/TNANO.2003.817527
DOI10.1109/TNANO.2003.817527

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