An analysis of the DC and small-signal AC performance of the tunnel emitter transistor

TitleAn analysis of the DC and small-signal AC performance of the tunnel emitter transistor
Publication TypeJournal Article
Year of Publication1988
AuthorsCHU, K. M., and D. L. Pulfrey
JournalElectron Devices, IEEE Transactions on
Volume35
Pagination188 -194
Date Publishedfeb.
ISSN0018-9383
KeywordsAl-SiO2-Si, cutoff frequency, DC performance, equivalent circuit, equivalent circuits, I-V characteristics, insulated gate field effect transistors, MIS structure, model, semiconductor device models, small-signal AC performance, small-signal hybrid- pi, TETRAN, tunnel emitter transistor, tunnelling
Abstract

A model to describe the I-V characteristics of the tunnel emitter transistor (the TETRAN) is developed. It is based on a general model for tunneling in metal thin-insulator semiconductor structures. The model is used to compute typical magnitudes for the parameters appearing in the small-signal hybrid- pi; equivalent circuit of this device. From these it is predicted that the cutoff frequency for realistic TETRANs based on Al/SiO2/n-Si structures is about 1 GHz. This is considerably less than the values recently predicted for a related device, the BICFET, which is similar to the TETRAN

URLhttp://dx.doi.org/10.1109/16.2439
DOI10.1109/16.2439

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