A 900 MHz GSM PA in 250 nm CMOS with breakdown voltage protection and programmable conduction angle

TitleA 900 MHz GSM PA in 250 nm CMOS with breakdown voltage protection and programmable conduction angle
Publication TypeConference Paper
Year of Publication2004
AuthorsChoi, K., D. J. Allstot, and V. Krishnamurthy
Conference NameRadio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Paper s. 2004 IEEE
Pagination369 - 372
Date Publishedjun.
Keywords1 to 5 W, 2 W, 2.5 V, 250 nm, 3.0 V, 30 percent, 43 percent, 900 MHz, bias voltages, breakdown voltage protection, cellular radio, class-E driver stage, CMOS analogue integrated circuits, CMOS GSM PA, cross-coupled self-biased cascode configuration, drain efficiencies, integrated circuit measurement, maximum voltage stress, power supply voltages, power-added efficiencies, programmable conduction angle, three-stage GSM power amplifier, UHF integrated circuits, UHF power amplifiers
Abstract

A three-stage 900 MHz GSM power amplifier implemented in 2 mm2 in 250 nm CMOS outputs 2 W and 1-5 W with 30 and 43% drain and power-added efficiencies with 3.0 and 2.5 V power supply voltages, respectively. A cross-coupled self-biased cascode configuration reduces maximum voltage stress in the class-E driver stage to 1.6 VDD without the use of additional bias voltages. A programmable conduction angle technique is also introduced and demonstrated.

URLhttp://dx.doi.org/10.1109/RFIC.2004.1320624
DOI10.1109/RFIC.2004.1320624

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