Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications?

TitleIs there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications?
Publication TypeConference Paper
Year of Publication2008
AuthorsChen, L., and D. L. Pulfrey
Conference NameDevice Research Conference, 2008
Pagination111 -112
Date Publishedjun.
Keywordsband structure, bandgap region, C, carbon nanotube field-effect transistors, carbon nanotubes, effective mass, energy gap, energy-dependent effective mass, field effect transistors, nanotube devices, propagation velocity, Schrodinger-Poisson solver, short-channel CNFETs
Abstract

This paper presents simulations of fT for short-channel carbon nanotube field-effect transistors (CNFETs). To more accurately account for the propagation velocity in our effective-mass Schrodinger-Poisson solver, an energy-dependent effective mass m*(E) is introduced, but extending it to apply to the entire band structure, rather than only to the bandgap region.

URLhttp://dx.doi.org/10.1109/DRC.2008.4800759
DOI10.1109/DRC.2008.4800759

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