Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications?

Title	Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications?
Publication Type	Conference Paper
Year of Publication	2008
Authors	Chen, L., and D. L. Pulfrey
Conference Name	Device Research Conference, 2008
Pagination	111 -112
Date Published	jun.
Keywords	band structure, bandgap region, C, carbon nanotube field-effect transistors, carbon nanotubes, effective mass, energy gap, energy-dependent effective mass, field effect transistors, nanotube devices, propagation velocity, Schrodinger-Poisson solver, short-channel CNFETs
Abstract	This paper presents simulations of fT for short-channel carbon nanotube field-effect transistors (CNFETs). To more accurately account for the propagation velocity in our effective-mass Schrodinger-Poisson solver, an energy-dependent effective mass m*(E) is introduced, but extending it to apply to the entire band structure, rather than only to the bandgap region.
URL	http://dx.doi.org/10.1109/DRC.2008.4800759
DOI	10.1109/DRC.2008.4800759

The University of British Columbia