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| Title | Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications? |
| Publication Type | Conference Paper |
| Year of Publication | 2008 |
| Authors | Chen, L., and D. L. Pulfrey |
| Conference Name | Device Research Conference, 2008 |
| Pagination | 111 -112 |
| Date Published | jun. |
| Keywords | band structure, bandgap region, C, carbon nanotube field-effect transistors, carbon nanotubes, effective mass, energy gap, energy-dependent effective mass, field effect transistors, nanotube devices, propagation velocity, Schrodinger-Poisson solver, short-channel CNFETs |
| Abstract | This paper presents simulations of fT for short-channel carbon nanotube field-effect transistors (CNFETs). To more accurately account for the propagation velocity in our effective-mass Schrodinger-Poisson solver, an energy-dependent effective mass m*(E) is introduced, but extending it to apply to the entire band structure, rather than only to the bandgap region. |
| URL | http://dx.doi.org/10.1109/DRC.2008.4800759 |
| DOI | 10.1109/DRC.2008.4800759 |