Parasitics and design considerations on oxide-implant VCSELs

TitleParasitics and design considerations on oxide-implant VCSELs
Publication TypeConference Paper
Year of Publication2000
AuthorsChang, C. H., L. Chrostowski, and C. J. Chang-Hasnain
Conference NameSemiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Pagination95 -96
Keywords20 GHz, design considerations, design rule, distributed Bragg reflector lasers, high-speed optical techniques, high-speed transmitters, high-speed VCSELs, implant dimensions, implant process, ion implantation, laser beams, laser cavity resonators, lightwave communication systems, modulation bandwidth, modulation response, modulation speed, optical fabrication, optical fibre communication, optical modulation, optical transmitters, oxide dimensions, oxide-confined VCSELs, oxide-implant structures, oxide-implant VCSELs, oxide-only structures, parasitic limitation, proton-implanted VCSELs, Semiconductor lasers, small injection area, surface emitting lasers, thin oxide layer
Abstract

VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have gt;20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL's modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation

URLhttp://dx.doi.org/10.1109/ISLC.2000.882305
DOI10.1109/ISLC.2000.882305

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