High-frequency capability of Schottky-barrier carbon nanotube FETs

TitleHigh-frequency capability of Schottky-barrier carbon nanotube FETs
Publication TypeConference Paper
Year of Publication2007
AuthorsCastro, L. C., D. L. Pulfrey, and D. L. John
EditorBai, C., S. Xie, and X. Zhu
Conference NameNanoscience and Technology, Pts 1 and 2
Pagination693-696
PublisherNatl Ctr Nanosci & Technol; Natl Steering Comm Nanotechnol
Conference LocationLAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
ISBN Number978-3-908451-30-3
Keywordscarbon nanotube field-effect transistor, high-frequency figures of merit, resonance, small-signal properties
Abstract

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (f(T) and f(max)) in the terahertz regime.

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