An improved evaluation of the DC performance of carbon nanotube field-etiect transistors

TitleAn improved evaluation of the DC performance of carbon nanotube field-etiect transistors
Publication TypeJournal Article
Year of Publication2006
AuthorsCastro, L. C., D. L. John, and D. L. Pulfrey
JournalSmart Materials & Structures
Volume15
PaginationS9–S13
ISSN0964-1726
Abstract

A self-consistent Schrodinger-Poisson solver is used to improve upon a recent evaluation of the attainable DC performance of coaxial carbon nanotube field-effect transistors. The earlier evaluation, which was based oil the predictions of a compact model, is shown to be optimistic because of the model's inadequate treatment of quantum mechanical reflection of thermionically injected carriers. This deficiency of the compact model is remedied, to a large extent, by incorporating a new, short expression for quantum mechanical reflection under phase-incoherent conditions.

URLhttp://dx.doi.org/10.1088/0964-1726/15/1/003
DOI10.1088/0964-1726/15/1/003

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