Method for predicting fT for carbon nanotube FETs

TitleMethod for predicting fT for carbon nanotube FETs
Publication TypeJournal Article
Year of Publication2005
AuthorsCastro, L. C., D. L. John, D. L. Pulfrey, M. Pourfath, A. Gehring, and H. Kosina
JournalNanotechnology, IEEE Transactions on
Volume4
Pagination699 - 704
Date Publishednov.
ISSN1536-125X
KeywordsC, capacitance, carbon nanotube devices, carbon nanotubes, charges, currents, electric admittance, equivalent circuits, FETs, field effect transistors, field-effect transistors, gate-source bias voltage, nanotechnology, numerical differentiation, Poisson equation, Poisson equations, quantum effect semiconductor devices, quantum wires, quasi-bound states, SCF calculations, Schrodinger equation, Schrodinger equations, self-consistent solutions, semiconductor device modeling, semiconductor devices, small-signal equivalent circuit, transconductance, unity-current-gain frequency
Abstract

A method based on a generic small-signal equivalent circuit for field-effect transistors is proposed for predicting the unity-current-gain frequency fT for carbon-nanotube devices. The key to the useful implementation of the method is the rigorous estimation of the values for the components of the equivalent circuit. This is achieved by numerical differentiation of the charges and currents resulting from self-consistent solutions to the equations of Schrodinger and Poisson. Sample results are presented, which show that fT can have a very unusual dependence on the gate-source bias voltage. This behavior is due mainly to the voltage dependence of the transconductance and capacitance in the presence of quasi-bound states in the nanotube.

URLhttp://dx.doi.org/10.1109/TNANO.2005.858603
DOI10.1109/TNANO.2005.858603

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