Electrical and Computer Engineering
2332 Main Mall
Vancouver,
BC
Canada
V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:
info@ece.ubc.ca
| Title | Method for predicting fT for carbon nanotube FETs |
| Publication Type | Journal Article |
| Year of Publication | 2005 |
| Authors | Castro, L. C., D. L. John, D. L. Pulfrey, M. Pourfath, A. Gehring, and H. Kosina |
| Journal | Nanotechnology, IEEE Transactions on |
| Volume | 4 |
| Pagination | 699 - 704 |
| Date Published | nov. |
| ISSN | 1536-125X |
| Keywords | C, capacitance, carbon nanotube devices, carbon nanotubes, charges, currents, electric admittance, equivalent circuits, FETs, field effect transistors, field-effect transistors, gate-source bias voltage, nanotechnology, numerical differentiation, Poisson equation, Poisson equations, quantum effect semiconductor devices, quantum wires, quasi-bound states, SCF calculations, Schrodinger equation, Schrodinger equations, self-consistent solutions, semiconductor device modeling, semiconductor devices, small-signal equivalent circuit, transconductance, unity-current-gain frequency |
| Abstract | A method based on a generic small-signal equivalent circuit for field-effect transistors is proposed for predicting the unity-current-gain frequency fT for carbon-nanotube devices. The key to the useful implementation of the method is the rigorous estimation of the values for the components of the equivalent circuit. This is achieved by numerical differentiation of the charges and currents resulting from self-consistent solutions to the equations of Schrodinger and Poisson. Sample results are presented, which show that fT can have a very unusual dependence on the gate-source bias voltage. This behavior is due mainly to the voltage dependence of the transconductance and capacitance in the presence of quasi-bound states in the nanotube. |
| URL | http://dx.doi.org/10.1109/TNANO.2005.858603 |
| DOI | 10.1109/TNANO.2005.858603 |