Carbon nanotube transistors: An evaluation

TitleCarbon nanotube transistors: An evaluation
Publication TypeJournal Article
Year of Publication2004
AuthorsCastro, L. C., D. L. John, and D. L. Pulfrey
Secondary AuthorsAbbott, D., K. Eshraghian, C. A. Musca, D. Pavlidis, and N. Weste
JournalMicroelectronics: Design, Technology, and Packaging
Volume5274
PaginationXXV–XXXIV
ISSN0277-786X
Abstract

A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit: a conductance close to the interfacial limit: an ON/OFF ratio of around 10(3). ON current and transconductance close to the low-quantum-capacitance limit.

URLhttp://dx.doi.org/10.1117/12.533349
DOI10.1117/12.533349

a place of mind, The University of British Columbia

Electrical and Computer Engineering
2332 Main Mall
Vancouver, BC Canada V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:

Emergency Procedures | Accessibility | Contact UBC | © Copyright 2020 The University of British Columbia