Carbon nanotube transistors: An evaluation

TitleCarbon nanotube transistors: An evaluation
Publication TypeJournal Article
Year of Publication2004
AuthorsCastro, L. C., D. L. John, and D. L. Pulfrey
Secondary AuthorsAbbott, D., K. Eshraghian, C. A. Musca, D. Pavlidis, and N. Weste
JournalMicroelectronics: Design, Technology, and Packaging

A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit: a conductance close to the interfacial limit: an ON/OFF ratio of around 10(3). ON current and transconductance close to the low-quantum-capacitance limit.


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