Towards a compact model for Schottky-barrier nanotube FETs

TitleTowards a compact model for Schottky-barrier nanotube FETs
Publication TypeConference Paper
Year of Publication2002
AuthorsCastro, L. C., D. L. John, and D. L. Pulfrey
Conference NameOptoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Pagination303 - 306
Date Publisheddec.
Keywords1 muA, 2D solutions, ballistic transport, carbon nanotubes, carbon-nanotube field-effect transistors, coaxial-geometry, compact model, drain current-voltage characteristics, Laplace equation, Laplace equations, nanotube devices, nonequilibrium barrier shapes, nonequilibrium flux approach, Poisson equation, Schottky barriers, Schottky gate field effect transistors, Schottky-barrier, Schottky-barrier nanotube FETs, source-tube, tunneling, tunnelling
Abstract

Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson's equation at equilibrium and Laplace's equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 mu;m are predicted.

URLhttp://dx.doi.org/10.1109/COMMAD.2002.1237251
DOI10.1109/COMMAD.2002.1237251

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