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| Title | Towards a compact model for Schottky-barrier nanotube FETs |
| Publication Type | Conference Paper |
| Year of Publication | 2002 |
| Authors | Castro, L. C., D. L. John, and D. L. Pulfrey |
| Conference Name | Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on |
| Pagination | 303 - 306 |
| Date Published | dec. |
| Keywords | 1 muA, 2D solutions, ballistic transport, carbon nanotubes, carbon-nanotube field-effect transistors, coaxial-geometry, compact model, drain current-voltage characteristics, Laplace equation, Laplace equations, nanotube devices, nonequilibrium barrier shapes, nonequilibrium flux approach, Poisson equation, Schottky barriers, Schottky gate field effect transistors, Schottky-barrier, Schottky-barrier nanotube FETs, source-tube, tunneling, tunnelling |
| Abstract | Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson's equation at equilibrium and Laplace's equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 mu;m are predicted. |
| URL | http://dx.doi.org/10.1109/COMMAD.2002.1237251 |
| DOI | 10.1109/COMMAD.2002.1237251 |