Film thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss

TitleFilm thickness and composition monitoring during growth by molecular beam epitaxy using alpha particle energy loss
Publication TypeJournal Article
Year of Publication1998
AuthorsBeaudoin, M., M. Adamcyk, Z. Gelbart, U. Giesen, I. Kelson, Y. Levy, J. A. MacKenzie, and T. Tiedje
JournalApplied Physics Letters
Volume72
Pagination3288–3290
ISSN0003-6951
Abstract

The alpha-particle energy loss method (AEL) has been implemented in situ to monitor film thickness during growth by molecular beam epitaxy. For InP and GaAs substrates recoil implanted with alpha-particle emitters, we have been able to measure thickness and composition of deposited GaAs, AlGaAs and InGaAs in real time. The AEL method yields in situ real time results comparable in accuracy to those obtained by ex situ scanning electron microscope and high-resolution x-ray diffraction measurements. (C) 1998 American Institute of Physics. [S0003-6951(98)02825-3].

a place of mind, The University of British Columbia

Electrical and Computer Engineering
2332 Main Mall
Vancouver, BC Canada V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:

Emergency Procedures | Accessibility | Contact UBC | © Copyright 2021 The University of British Columbia