Electrical and Computer Engineering
2332 Main Mall
Vancouver,
BC
Canada
V6T 1Z4
Tel +1.604.822.2872
Fax +1.604.822.5949
Email:
info@ece.ubc.ca
| Title | In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss |
| Publication Type | Journal Article |
| Year of Publication | 1997 |
| Authors | Beaudoin, M., Z. Gelbart, U. Giessen, I. Kelson, Y. Levy, J. A. MacKenzie, T. Pinnington, S. Ritchie, A. J. S. Thorpe, R. Streater, and T. Tiedje |
| Journal | Surface & Coatings Technology |
| Volume | 94-5 |
| Pagination | 374–378 |
| ISSN | 0257-8972 |
| Abstract | The alpha-particIe energy loss method has been implemented in situ to monitor film thickness during growth by molecular beam epitaxy. For InP and GaAs substrates dosed with 500-1500 Bq of alpha-particIe emitters, we have been able to measure thickness in situ of deposited GaAs and InP, to an accuracy of 6 nm in 180 s of counting time. The corresponding growth rate accuracy for growth rates on the order of 0.3 nm/s was +/-0.01 nm/s. The accuracy and counting time improvements expected with the use of a stronger marking source are also discussed. (C) 1997 Elsevier Science S.A. |