In situ thickness measurements in molecular beam epitaxy using alpha particle energy loss

TitleIn situ thickness measurements in molecular beam epitaxy using alpha particle energy loss
Publication TypeJournal Article
Year of Publication1997
AuthorsBeaudoin, M., Z. Gelbart, U. Giessen, I. Kelson, Y. Levy, J. A. MacKenzie, T. Pinnington, S. Ritchie, A. J. S. Thorpe, R. Streater, and T. Tiedje
JournalSurface & Coatings Technology
Volume94-5
Pagination374–378
ISSN0257-8972
Abstract

The alpha-particIe energy loss method has been implemented in situ to monitor film thickness during growth by molecular beam epitaxy. For InP and GaAs substrates dosed with 500-1500 Bq of alpha-particIe emitters, we have been able to measure thickness in situ of deposited GaAs and InP, to an accuracy of 6 nm in 180 s of counting time. The corresponding growth rate accuracy for growth rates on the order of 0.3 nm/s was +/-0.01 nm/s. The accuracy and counting time improvements expected with the use of a stronger marking source are also discussed. (C) 1997 Elsevier Science S.A.

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