Predicting GaAs surface shapes during MBE regrowth on patterned substrates

TitlePredicting GaAs surface shapes during MBE regrowth on patterned substrates
Publication TypeJournal Article
Year of Publication2004
AuthorsBallestad, A., T. Tiedje, J. H. Schmid, B. J. Ruck, and M. Adamcyk
JournalJournal of Crystal Growth
Volume271
Pagination13–21
ISSN0022-0248
Abstract

We have developed a continuum model based on two coupled differential equations that explains the complex surface shapes observed in epitaxial regrowth on micron scale gratings. This model describes the dependence of the surface morphology on film thickness and growth temperature in terms of a few simple atomic scale processes including adatom diffusion, step-edge attachment and detachment, and a net downhill migration of surface adatoms. The continuum model reduces to the linear part of the Kardar-Parisi-Zhang equation with a flux dependent smoothing coefficient in the long wavelength limit. (C) 2004 Elsevier B.V. All rights reserved.

URLhttp://dx.doi.org/10.1016/j.jcrysgro.2004.07.047
DOI10.1016/j.jcrysgro.2004.07.047

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