Evidence from the surface morphology for nonlinear growth of epitaxial GaAs films

TitleEvidence from the surface morphology for nonlinear growth of epitaxial GaAs films
Publication TypeJournal Article
Year of Publication2001
AuthorsBallestad, A., B. J. Ruck, M. Adamcyk, T. Pinnington, and T. Tiedje
JournalPhysical Review Letters
Volume86
Pagination2377–2380
ISSN0031-9007
Abstract

The mesoscale morphology of homoepitaxial GaAs surfaces is explained with an anisotropic and nonlinear Kardar-Parisi-Zhang (KPZ) model in which adatoms are incorporated into the film from a metastable surface layer. Evaporation-condensation between the film and the metastable layer is proposed as the microscopic physical origin of the KPZ description, as well as of the excess noise observed in the power spectral density. The parabolic mounds observed experimentally in films grown on rough substrates are in good agreement with the surface shape expected from the solution of the KPZ equation in the large amplitude limit.

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